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1T08E-A Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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1T08E-A Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 5 page www.nellsemi.com Page 4 of 5 SEMICONDUCTOR 1T Series RoHS RoHS Fig.5 Relative variation of holding current and latching current versus junction temperature (typ. values) Fig.6 Relative variation of gate trigger current (l ) GT and voltage(V ) versus junction temperature GT -50 -25 0 25 125 100 75 0.0 0.5 1.0 1.5 2.0 2.5 Fig.9 On-state characteristics (maximum values) (l = f(V )) TM TM Fig.10 Relative variation of critical rate of of main current versus decrease (dV/dt)c Fig.7 Surge peak on-state current versus number of cycles Fig.8 Non-repetitive surge peak on-state current 2 and corresponding value of l t sinusoidal pulse width l ,l [T ] / l ,l [T =25°C] H L j H L j (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.1 1.0 10.0 100.0 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 1 2 3 4 5 6 Fig.11 Relative variation of critical rate of decrease of main current (dl/dt) versus junction temperature (dl/dt)c [T ] / (dl/dt)c [T Specified] j j Fig.12 Relative variation of static dV/dt immunity versus junction temperature (gate open) Tj( °C) lL lH l ,V [T ] / l ,V [T =25°C] GT GT j GT GT j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 125 100 75 50 l (A) TSM T initial=25°C j Repetitive T =95°C amb Number of cycles Non repetitive t=20ms One cycle 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 l Q1-Q2 GT l Q3 GT l Q4 GT V Q1-Q2-Q3-Q4 GT 1 20 100 10 0.01 0.10 1.00 10.00 dl/dt limitation: 20A/µs t (ms) P 2 2 l (A), l t(A s) TSM T initial = 25°C j lTSM 2 l t 0 25 50 75 100 125 Tj( °C) 10.0 1.0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 T = max. j V = 0.95V to R = 400mΩ d T = j T max. j T = 25°C j V (V) TM 0.0 2.6 T D S A (dV/dt)c (V/µs) 0 1 2 3 4 5 6 (dV/dt)c [T ] / (dV/dt)c [T = 125°C] j j 25 50 75 100 125 Tj( °C) l (A) TM V =V =402V D R |
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