1T08E-A datasheet(4/5 Pages) NELLSEMI

Part #	1T08E-A

Description	Standard TRIACs, 1A

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

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SEMICONDUCTOR

1T Series RoHS

RoHS

Fig.5 Relative variation of holding current and

latching current versus junction temperature

(typ. values)

Fig.6 Relative variation of gate trigger current (l

)

GT

and voltage(V

) versus junction temperature

GT

-50

-25

0

25

125

100

75

0.0

0.5

1.0

1.5

2.0

2.5

Fig.9 On-state characteristics (maximum values)

(l

= f(V

))

TM

Fig.10 Relative variation of critical rate of

of main current versus

decrease

(dV/dt)c

Fig.7 Surge peak on-state current versus

number of cycles

Fig.8 Non-repetitive surge peak on-state current

2

and corresponding value of l t sinusoidal

pulse width

l ,l [T ] / l ,l [T =25°C]

H L

j

H L

j

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.1

1.0

10.0

100.0

50

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0

1

2

3

4

5

6

Fig.11 Relative variation of critical rate of decrease

of main current (dl/dt) versus junction

temperature

(dl/dt)c [T ] / (dl/dt)c [T Specified]

j

Fig.12 Relative variation of static dV/dt immunity

versus junction temperature (gate open)

Tj(

°C)

lL

lH

l

,V

[T ] / l

,V

[T =25°C]

GT

j

GT

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

0

25

125

100

75

50

l

(A)

TSM

T initial=25°C

j

Repetitive

T

=95°C

amb

Number of cycles

Non repetitive

t=20ms

One cycle

1

10

100

1000

0

1

2

3

4

5

6

7

8

9

l

Q1-Q2

GT

l

Q3

GT

l

Q4

GT

V

Q1-Q2-Q3-Q4

GT

1

20

100

10

0.01

0.10

1.00

10.00

dl/dt limitation:

20A/µs

t (ms)

P

2

l

(A), l t(A s)

TSM

T initial = 25°C

j

lTSM

2

l t

0

25

50

75

100

125

Tj(

°C)

10.0

1.0

0.1

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

T = max.

j

V = 0.95V

to

R = 400mΩ

d

T =

j

T max.

j

T = 25°C

j

V

(V)

TM

0.0

2.6

T

D

S

A

(dV/dt)c (V/µs)

0

1

2

3

4

5

6

(dV/dt)c [T ] / (dV/dt)c [T = 125°C]

j

25

50

75

100

125

Tj(

°C)

l

(A)

TM

V =V =402V

D

R

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