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MCM67A618BFN15 Datasheet(PDF) 2 Page - Motorola, Inc |
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MCM67A618BFN15 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 12 page MCM67A618B 2 MOTOROLA FAST SRAM BLOCK DIAGRAM A0 – A15 DQ0 – DQ17 MEMORY ARRAY 64K x 18 E WRITE AMP OUTPUT BUFFER CONTROL 16 18 AL LW UW G 16 18 18 LATCH DL 18 9 9 LATCH LATCH TRUTH TABLE E LW UW AL* DL* G Mode Supply Current I/O Status H X X X X X Deselected Cycle ISB High–Z L X X L X X Read or Write Using Latched Addresses ICC — L X X H X X Read or Write Using Unlatched Addresses ICC — L H H X X L Read Cycle ICC Data Out L H H X X H Read Cycle ICC High–Z L L L X L X Write Both Bytes Using Latched Data In ICC High–Z L L L X H X Write Both Bytes Using Unlatched Data In ICC High–Z L L H X X X Write Cycle, Lower Byte ICC High–Z L H L X X X Write Cycle, Lower Byte ICC High–Z *E and Addresses satisfy the specified setup and hold times for the falling edge of AL. Data–in satisfies the specified setup *and hold times for falling edge of DL. NOTE: This truth table shows the application of each function. Combinations of these functions are valid. ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0) Rating Symbol Value Unit Power Supply Voltage VCC – 0.5 to 7.0 V Voltage Relative to VSS for Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current (per I/O) Iout ± 30 mA Power Dissipation PD 1.6 W Temperature Under Bias Tbias – 10 to + 85 °C Ambient Temperature TA 0 to + 70 °C Storage Temperature Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maxi- mum rated voltages to this high–impedance circuit. This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. This device contains circuitry that will ensure the output devices are in High–Z at power up. |
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