SR520-G Thru. SR5200-G

Forward current: 5.0A

Reverse voltage: 20 to 200V

RoHS Device

Schottky Barrier Rectifier

QW-BB027

Page 1

REV:A

Features

-Axial lead type devices for through hole design.

-Low power loss, high efficiency.

-High current capability, Low forward voltage drop.

-High surge capability.

Mechanical Data

-Case: Molded plastic, DO-201AD/DO-27

-Epoxy: UL94V-0 rate flame retardant.

-Polarity: color band denoted cathode end.

-Lead: Axial lead, solderable per MIL-STD-202,

Method 208 guranteed.

-Weight: 1.10 gram

.

(approx.)

Dimensions in inches and (millimeter)

DO-27

1.0(25.4) min.

1.0(25.4) min.

0.375(9.50)

0.285(7.20)

0.220(5.60)

0.197(5.00)

0.052(1.30)

0.048(1.20)

Parameter

Unit

Maximum Ratings and Electrical Characteristics

Ratings at Ta=25°C unless otherwise noted.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derate current by 20% .

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Operating junction temperature range

Symbol

SR520

SR540

SR560

SR5100

-G

SR5150

-G

SR5200

-G

20

14

20

40

28

40

-50 ~ +150

60

42

60

100

70

100

150

105

150

200

140

200

-50 ~ +175

V

V

V

0.50

0.81

0.90

V

0.75

0.55

0.87

°C

Forward surge current

Reverse Current

Storage temperature

A

A

mA

Parameter

Conditions

on rate load (JEDEC method)

8.3ms single half sine-wave superimposed

Forward rectified current

see Fig.1

Thermal Resistance

Diode Junction capacitance

Junction to ambient

Symbol

MIN.

TYP.

MAX.

mA

°C/W

pF

°C

5.0

125

0.5

20

24

380

-50

+175

Unit

Comchip

S M D D i o d e S p e c i a l i s t

-Guardring for overvoltage protection.

-Ultra high-speed switching.

-Silicon epitaxial planar chip, metal silicon junction.

-Lead-free part meets environmental standards of

MIL-STD-19500/228

-G

-G

-G

Maximum instantaneous forward voltage

DIA.

DIA.