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HMC995LP5GE Datasheet(PDF) 6 Page - Hittite Microwave Corporation |
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HMC995LP5GE Datasheet(HTML) 6 Page - Hittite Microwave Corporation |
6 / 10 page For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 6 HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1-5) +8V RF Input Power (RFIN) +24 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 137 mW/°C above 85 °C) 8.9 W Thermal Resistance (channel to gnd paddle) 7.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Vdd (V) Idd (mA) 5 1200 6 1200 7 1200 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA Typical Supply Current vs. Vdd ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS |
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