ADG5236BRUZ datasheet(4/20 Pages) AD

Part #	ADG5236BRUZ

Description	High Voltage Latch-Up Proof

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ADG5236

Data Sheet

Rev. A | Page 4 of 20

Parameter

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

POWER REQUIREMENTS

VDD = +16.5 V, VSS = −16.5 V

IDD

45

µA typ

Digital inputs = 0 V or VDD

55

70

µA max

ISS

0.001

µA typ

Digital inputs = 0 V or VDD

1

µA max

VDD/VSS

±9/±22

V min/V max

GND = 0 V

1

Guaranteed by design; not subject to production test.

±20 V DUAL SUPPLY

VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.

Table 2.

Parameter

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

VDD to VSS

V max

On Resistance, RON

140

Ω typ

VS = ±15 V, IS = −1 mA, see Figure 25

160

200

230

Ω max

VDD = +18 V, VSS = −18 V

On-Resistance Match

Between Channels, ∆RON

1.3

Ω typ

VS = ±15 V, IS = −1 mA

8

9

10

Ω max

On-Resistance Flatness, RFLAT (ON)

33

Ω typ

VS = ±15 V, IS = −1 mA

45

55

60

Ω max

LEAKAGE CURRENTS

VDD = +22 V, VSS = −22 V

Source Off Leakage, IS (Off)

0.01

nA typ

VS = ±15 V, VD =  15 V, see Figure 27

0.1

0.2

0.4

nA max

Drain Off Leakage, ID (Off)

0.01

nA typ

VS = ±15 V, VD =  15 V, see Figure 27

0.1

0.4

1.2

nA max

Channel On Leakage, ID (On), IS (On)

0.02

nA typ

VS = VD = ±15 V, see Figure 24

0.2

0.4

1.2

nA max

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.8

V max

Input Current, IINL or IINH

0.002

µA typ

VIN = VGND or VDD

±0.1

µA max

Digital Input Capacitance, CIN

3

pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, tTRANSITION

150

ns typ

RL = 300 Ω, CL = 35 pF

210

260

290

ns max

VS = 10 V, see Figure 30

tON

150

ns typ

RL = 300 Ω, CL = 35 pF

190

235

267

ns max

VS = 10 V, see Figure 32

tOFF

155

ns typ

RL = 300 Ω, CL = 35 pF

180

200

215

ns max

VS = 10 V, see Figure 32

Break-Before-Make Time Delay, tD

60

ns typ

RL = 300 Ω, CL = 35 pF

30

ns min

VS1 = VS2 = 10 V, see Figure 31

Charge Injection, QINJ

−0.6

pC typ

VS = 0 V, RS = 0 Ω, CL = 1 nF, see

Figure 33

Off Isolation

−85

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 28

Channel-to-Channel Crosstalk

−85

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 26

−3 dB Bandwidth

266

MHz typ

RL = 50 Ω, CL = 5 pF, see Figure 29

Insertion Loss

−7

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz,

see Figure 29

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