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EL817(S)(B)(TA)-FVG Datasheet(PDF) 1 Page - Everlight Electronics Co., Ltd |
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EL817(S)(B)(TA)-FVG Datasheet(HTML) 1 Page - Everlight Electronics Co., Ltd |
1 / 14 page LifecyclePhase: Revision : 4 Expired Period: Forever Release Date:2011-02-18 08:59:58.0 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER Everlight Electronics Co., Ltd. 1 http://www.everlight.com Document No:DPC-0000011 Rev.4 July 30, 2010 EL817-G Series Features: • Halogens free. • Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • Creepage distance >7.62 mm • Operating temperature up to +110°C • Compact small outline package • Pb free and RoHS compliant. • UL approved (No. E214129) • VDE approved (No. 132249) • SEMKO approved • NEMKO approved • DEMKO approved • FIMKO approved • CSA approved • CQC approved Description The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound. The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option. Applications • Programmable controllers • System appliances, measuring instruments • Telecommunication equipments • Home appliances, such as fan heaters, etc. • Signal transmission between circuits of different potentials and impedances Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector Schematic |
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