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EL814M(A)(TD)-V Datasheet(PDF) 3 Page - Everlight Electronics Co., Ltd |
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EL814M(A)(TD)-V Datasheet(HTML) 3 Page - Everlight Electronics Co., Ltd |
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3 / 13 page (TD)-V/1494/3/EL814M(A)(TD)-V.png) 4 PIN DIP PHOTOTRANSISTOR AC INPUT PHOTOCOUPLER Everlight Electronics Co., Ltd. 3 http://www.everlight.com Document No：DPC-0000043 Rev. 3 December, 28 2009 EL814 Series Electrical Characteristics (Ta=25°C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Condition Forward voltage VF - 1.2 1.4 V IF = ± 20mA Input capacitance Cin - 50 250 pF V = 0, f = 1KHz Output Parameter Symbol Min. Typ.* Max. Unit Condition Collector-Emitter dark current ICEO - - 100 nA VCE = 20V, IF = 0mA Collector-Emitter breakdown voltage BVCEO 80 - - V IC = 0.1mA Emitter-Collector breakdown voltage BVECO 6 - - V IE = 0.1mA Transfer Characteristics (Ta=25°C unless specified otherwise) Parameter Symbol Min. Typ.* Max. Unit Condition EL814 20 - 300 Current Transfer ratio EL814A CTR 50 - 150 % IF = ±1mA ,VCE = 5V CTR Symmetry 0.7 1.3 IF = ±1mA ,VCE = 5V Collector-emitter saturation voltage VCE(sat) - 0.05 0.2 V IF = ±20mA ,Ic = 1mA Isolation resistance RIO 5×10 10 10 11 - Ω VIO = 500Vdc, 40 60%R H Cut-off frequency fc - 80 - kHz VCE=5V, IC=2 mA, RL=100Ω, -3dB Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz Rise time Tr - 7 18 µs Fall time Tf - 11 18 µs VCE=2V, IC=2mA,RL=100Ω * Typical values at Ta = 25°C |
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