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CPC3720C Datasheet(PDF) 1 Page - Clare, Inc. |
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CPC3720C Datasheet(HTML) 1 Page - Clare, Inc. |
1 / 5 page PRELIMINARY PRELIMINARY DS-CPC3720-R00D 1 CPC3720 N-Channel Depletion-Mode FET RoHS 2002/95/EC e3 Pb V (BR)DSX / V (BR)DGX R DS(on) (max) I DSS (min) Package 350V P 22 130mA SOT-89 Applications Features Description Ordering Information Package Pinout • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply • Offers Low R DS(on) at Cold Temperatures • R DS(on) 22 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350V P • Low V GS(off) Voltage: -1.6 to -3.9V • Small Package Size SOT-89 The CPC3720 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3720 is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3720 offers a low, 22 maximum, on-state resistance at 25ºC. The CPC3720 has a minimum breakdown voltage of 350V P , and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. (SOT-89) G D S D Circuit Symbol S G D Part # Description CPC3720C N-Channel Depletion Mode FET, SOT-89 Pkg. Cut-Tape, Available in Quantities of 200, 300, 400, 500, and 600 CPC3720CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) |
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