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DS-CPC3703-R04

1

CPC3703

N-Channel Depletion-Mode

Vertical DMOS FET

RoHS

2002/95/EC

Pb

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

250V

4



360mA

SOT-89

Applications

Features

Description

Ordering Information

Circuit Symbol

 max. at 25ºC

DS(on)

at Cold Temperatures

The CPC3703 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes Clare’s proprietary

third-generation vertical DMOS process. The

third-generation process realizes world class, high

voltage MOSFET performance in an economical

silicon gate process. Our vertical DMOS process

yields a robust device, with high input impedance, for

use in high-power applications. The CPC3703 is a

highly reliable device that has been used extensively

in Clare’s Solid State Relays for industrial and

telecommunications applications.

This device excels in power applications that require

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3703 offers a low, 4

 maximum, on-state

resistance at 25ºC.

The CPC3703 has a minimum breakdown voltage of

250V, and is available in an SOT-89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

(SOT-89)

G

D

S

D

S

G

D

Package Pinout

Part #

Description

CPC3703C

N-Channel Depletion Mode FET, SOT-89 Pkg.

Cut-Tape, Available in Quantities of 200, 300,

400, 500, and 600

CPC3703CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)