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UTT4425 Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT4425 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 5 page UTT4425 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-562.a ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 Gate-Source Voltage VGSS ±25 V TA = 25°C -14 Continuous (Note 2) TA = 70°C ID -11 Drain Current Pulsed (Note 3) IDM -50 A TA = 25°C 3.1 Power Dissipation (Note 2) TA = 70°C PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 2) θJA 75 °C/W Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 3. Repetitive rating, pulse width limited by junction temperature. |
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