UTT120P06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-728.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

-120

A

-95

A

Pulsed

-480

A

Single Pulsed Avalanche Energy

L=-0.1mH

281 (Note 2)

mJ

Power Dissipation

192

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Duty cycle≦1%

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62

°C/W

Junction to Case

0.65

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

V

Drain-Source Leakage Current

-1

µA

-50

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Static Drain-Source On-State Resistance

5.5

6.9

mΩ

7.0

8.8

mΩ

DYNAMIC PARAMETERS

Input Capacitance

11400

pF

Output Capacitance

1200

pF

Reverse Transfer Capacitance

900

pF

SWITCHING PARAMETERS

Total Gate Charge

230

345

nC

Gate to Source Charge

50

nC

Gate to Drain Charge

60

nC

Turn-ON Delay Time

20

ns

Rise Time

160

240

ns

Turn-OFF Delay Time

200

ns

Fall-Time

240

360

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-120

A

Maximum Body-Diode Pulsed Current

-480

A

Drain-Source Diode Forward Voltage

-1.0

-1.5

V

Body Diode Reverse Recovery Time

65

100

ns

Body Diode Reverse Recovery Charge

0.14

0.32

nC

Notes: 1. Pulse test, pulse width≦300µS, duty cycle≦2%