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UTT60P03L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT60P03L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page UTT60P03 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-605.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous ID -60 A Drain Current Pulsed (Note 2) IDM 240 A Power Dissipation 45 W Derate Above 25°C PD 0.36 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: Pulse width limited by maximum junction temperature THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 2.73 °C/W |
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