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UTT60P03 Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT60P03 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page  UTT60P03 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-605.a ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V -30 V VDS=Rated BVDSS, VGS=0V -1 Drain-Source Leakage Current IDSS VDS=0.8×Rated BVDSS, TC=150°C -50 µA Forward VGS=+20V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-20V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -2 -4 V Static Drain-Source On-State Resistance (Note) RDS(ON) VGS=-10V, ID=-60A 0.027 Ω DYNAMIC PARAMETERS Input Capacitance CISS 3000 pF Output Capacitance COSS 1500 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=-25V, f=1.0MHz 525 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=0 ~ -20V 190 230 nC Gate Charge at 10V QG(-10) VGS=0 ~ -10V 100 120 nC Threshold Gate Charge QG(TH) VGS=0 ~ -2V VDD=-24V, ID≈-60A, RL=0.4Ω, IG(REF)=-3mA 7.5 9 nC Turn-On Time tON 140 ns Turn-ON Delay Time tD(ON) 20 ns Rise Time tR 75 ns Turn-OFF Delay Time tD(OFF) 35 ns Fall-Time tF 40 ns Turn-Off Time tOFF VDD=15V, VGS=-10V, ID≈60A, RL=0.25Ω, RG=2.5Ω 115 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note ) VSD ISD=-60A -1.75 V Body Diode Reverse Recovery Time tRR ISD=-60A, ISD/dt=100A/µs 200 ns Note: Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. |
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