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UTT30N06G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT30N06G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page  UTT30N06 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-637.A ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 μA Forward VGS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID=250μA,Referenced to 25℃ 0.06 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 32 40 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS 800 pF Output Capacitance COSS 300 pF Reverse Transfer Capacitance CRSS VGS = 0 V, VDS = 25 V, f = 1MHz 80 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 12 ns Turn-On Rise Time tR 79 ns Turn-Off Delay Time tD(OFF) 50 ns Turn-Off Fall Time tF VDD = 30V, ID =15 A, VGS=10V (Note 1, 2) 52 ns Total Gate Charge QG 20 30 nC Gate-Source Charge QGS 6 nC Gate-Drain Charge QGD VDS = 60V, VGS = 10 V, ID = 24A (Note 1, 2) 9 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 30 A Maximum Pulsed Drain-Source Diode Forward Current ISM 120 A Reverse Recovery Time tRR 40 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 30A, dIF / dt = 100 A/μs (Note 1) 70 μC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. |
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