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UTF1404G-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTF1404G-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UTF1404 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-679.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (VGS=10V) TC=25°C ID 162 (Note 4) A TC=100°C 115 (Note 4) A Pulsed (Note 2) TC=25°C IDM 650 A Avalanche Current (Note 2) IAR 95 A Avalanche Energy Single Pulsed (Note 3) EAS 519 mJ Repetitive (Note 2) EAR 20 mJ Power Dissipation (TC=25°C) PD 166 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by maximum junction temperature 3. Starting TJ=25°C, L=0.12mH, RG=25Ω, IAS=95A 4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 0.75 °C/W |
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