UT6402

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-152.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

6.9

A

Pulsed Drain Current (Note 2)

20

A

Power Dissipation

2

W

Junction Temperature

+150

℃

Strong Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note 3)

74

110

/W

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.9

3

V

On State Drain Current

20

A

22.5

28

mΩ

Static Drain-Source On-Resistance

(Note 2)

34.5

42

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

680

820

Output Capacitance

102

Reverse Transfer Capacitance

77

108

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

4.6

Turn-ON Rise Time

4.1

Turn-OFF Delay Time

20.6

Turn-OFF Fall-Time

5.2

ns

Total Gate Charge (Note 2)

11.5 13.88 16.7

Gate Source Charge

1.82

Gate Drain Charge

3.2

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.76

1

V

Maximum Body-Diode Continuous

Current

3

A

Reverse Recovery Time

16.5

20

ns

Reverse Recovery Charge

7.8

nC

2. Pulse width ≤300us, duty cycle ≤0.5%.

3. Surface mounted on 1 in