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UT4430L-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT4430L-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UT4430 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-333.A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Ta=25°C) (Note 2) t≤10s ID 18 A Pulsed Drain Current (Note 3) IDM 80 A Avalanche Current (Note 3) IAR 30 A Repetitive avalanche energy (Note 3) L=0.3mH EAR 135 mJ Power Dissipation (Ta=25°C) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface mounted on 1 in2 copper pad of FR4 board 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note) θJA 59 75 °C/W Note: Surface mounted on 1 in2 copper pad of FR4 board ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 30 V Drain-Source Leakage Current IDSS VDS=30V,VGS=0V 1 µA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V 100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VD S=VGS, ID=250µA 1 1.8 2.5 V On State Drain Current ID(ON) VGS =4.5V, VDS =5V 80 A VGS=10V, ID=18A 4.7 5.5 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=15A 6.2 7.5 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 4660 6060 7270 pF Output Capacitance COSS 425 638 960 pF Reverse Transfer Capacitance CRSS VDS=15V, VGS=0 V, f=1MHz 240 355 530 pF Gate Resistance RG VGS=0V, VDS=0V, f=1MHz 0.2 0.45 0.9 Ω SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 12 16 ns Turn-ON Rise Time tR 8 12 ns Turn-OFF Delay Time tD(OFF) 51.5 70 ns Turn-OFF Fall-Time tF VGS=10V,VDS=15V, RL=0.83Ω, RGEN=3Ω 8.8 14 ns Total Gate Charge QG 80 103 124 nC Gate Source Charge QGS 18 nC Gate Drain Charge QGD VGS=10 V, VDS=15 V, ID=18 A 15 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1 A, VGS=0 V 0.7 1 V Diode Continuous Forward Current IS 4.5 A Reverse Recovery Time tRR 33.5 44 ns Reverse Recovery Charge QRR IF=18A, dI/dt=100A/μs 22 30 nC |
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