UT4422 datasheet(3/6 Pages) UTC

Part #	UT4422

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UT4422

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-206.B

SOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

30

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (TA=25°C) (Note 1)

ID

11

A

Pulsed Drain Current

IDM

50

A

Power Dissipation (TC=25°C)

PD

3

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

59 ~ 75

Junction to Case

θJC

16 ~ 24

°C/W

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

30

V

Drain-Source Leakage Current

IDSS

VDS =24 V, VGS =0 V

0.003

1

µA

Gate-Body Leakage Current

IGSS

VDS =0 V, VGS = ±20 V

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

1

1.8

3

V

On State Drain Current

ID(ON)

VDS =5V, VGS =4.5 V

40

A

VGS =10V, ID =11A

12.6

15

Static Drain-Source On-Resistance

RDS(ON)

VGS =4.5 V, ID =10 A

19.6

24

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

800

1040 1250

Output Capacitance

COSS

140

180

220

Reverse Transfer Capacitance

CRSS

VDS =15V, VGS =0V, f=1MHz

80

110

140

pF

SWITCHING PARAMETERS

Total Gate Charge

QG

15

19.8

24

Gate Source Charge

QGS

2.5

Gate Drain Charge

QGD

VDS =15V, VGS =10V, ID =11A

3.5

nC

Turn-ON Delay Time

tD(ON)

4.5

6.5

Turn-ON Rise Time

tR

3.9

5.5

Turn-OFF Delay Time

tD(OFF)

17.4

25

Turn-OFF Fall-Time

tF

VGS=10V,VDS=15V,RL=1.35Ω,

RGEN =3Ω

3.2

5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=1A,VGS=0V

0.75

1

V

Maximum Body-Diode Continuous

Current

IS

4.3

A

Body Diode Reverse Recovery Time

tRR

17.5

21

ns

Body Diode Reverse Recovery

Charge

QRR

IF=11 A, dI/dt=100A/μs

9.3

12

nC

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