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UT4422 Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT4422 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UT4422 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-206.B SOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TA=25°C) (Note 1) ID 11 A Pulsed Drain Current IDM 50 A Power Dissipation (TC=25°C) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 59 ~ 75 Junction to Case θJC 16 ~ 24 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250 µA 30 V Drain-Source Leakage Current IDSS VDS =24 V, VGS =0 V 0.003 1 µA Gate-Body Leakage Current IGSS VDS =0 V, VGS = ±20 V 100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 1 1.8 3 V On State Drain Current ID(ON) VDS =5V, VGS =4.5 V 40 A VGS =10V, ID =11A 12.6 15 Static Drain-Source On-Resistance RDS(ON) VGS =4.5 V, ID =10 A 19.6 24 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 800 1040 1250 Output Capacitance COSS 140 180 220 Reverse Transfer Capacitance CRSS VDS =15V, VGS =0V, f=1MHz 80 110 140 pF SWITCHING PARAMETERS Total Gate Charge QG 15 19.8 24 Gate Source Charge QGS 2.5 Gate Drain Charge QGD VDS =15V, VGS =10V, ID =11A 3.5 nC Turn-ON Delay Time tD(ON) 4.5 6.5 Turn-ON Rise Time tR 3.9 5.5 Turn-OFF Delay Time tD(OFF) 17.4 25 Turn-OFF Fall-Time tF VGS=10V,VDS=15V,RL=1.35Ω, RGEN =3Ω 3.2 5 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A,VGS=0V 0.75 1 V Maximum Body-Diode Continuous Current IS 4.3 A Body Diode Reverse Recovery Time tRR 17.5 21 ns Body Diode Reverse Recovery Charge QRR IF=11 A, dI/dt=100A/μs 9.3 12 nC |
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