UT3414

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-248.E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

4.2

A

Pulsed Drain Current

15

A

Power Dissipation

1.4

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

100

125

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.4

0.6

1

V

On State Drain Current

15

A

41

50

52

63

Static Drain-Source On-Resistance

67

87

mΩ

DYNAMIC PARAMETERS

Input Capacitance

436

pF

Output Capacitance

66

pF

Reverse Transfer Capacitance

44

pF

SWITCHING PARAMETERS

Turn ON Delay Time

5.5

ns

Turn ON Rise Time

6.3

ns

Turn OFF Delay Time

40

ns

Turn OFF Fall-Time

12.7

ns

Total Gate Charge

6.2

nC

Gate Source Charge

1.6

nC

Gate Drain Charge

0.5

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

0.76

1

V

Maximum Body-Diode Continuous

Current

2

A

Body Diode Reverse Recovery Time

12.3

ns

Body Diode Reverse Recovery

Charge

3.5

nC