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UT3406G-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT3406G-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 3 page UNISONIC TECHNOLOGIES CO., LTD UT3406 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-336.a N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications. FEATURES * VDS (V) = 30V * ID = 3.6A (VGS = 10V) * RDS(ON) <65mΩ (VGS = 10V) * RDS(ON) <105mΩ (VGS = 4.5V) * Halogen Free SYMBOL ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UT3406G-AE3-R SOT-23 S G D Tape Reel MARKING 346G |
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