UT2308

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-128.d

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±10

V

Continuous Drain Current

2.7

A

Power Dissipation

1.25

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate-Threshold Voltage

0.4

0.8

1.0

V

80

mΩ

Static Drain-Source On-State

Resistance (Note2)

110

mΩ

DYNAMIC PARAMETERS

Input Capacitance

215

pF

Output Capacitance

65

pF

Reverse Transfer Capacitance

45

pF

SWITCHING CHARACTERISTICS

Total Gate Charge

3.8

nC

Gate Source Charge

0.7

nC

Gate-Drain Charge

0.9

nC

2. Pulse width≤300μs, duty cycle≤2%.

3. Surface mounted on FR4 board t≤5 sec.