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CMT2N7002X Datasheet(PDF) 1 Page - Champion Microelectronic Corp. |
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CMT2N7002X Datasheet(HTML) 1 Page - Champion Microelectronic Corp. |
1 / 6 page CMT2N7002 SMALL SIGNAL MOSFET 2010/03/23 Rev. 1.9 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PIN CONFIGURATION SYMBOL SOT-23, SOT-323 SOT-363 Top View Top View D2 G1 S1 1 3 2 S2 G2 D1 D S G N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 CMT2N7002G* SOT-23 CMT2N7002WG* SOT-323 CMT2N7002DWG* SOT-363 CMT2N7002X* SOT-23 CMT2N7002WX* SOT-323 CMT2N7002DWX* SOT-363 *Note: G : Suffix for Pb Free Product W: Suffix for Package SOT-323 X : Suffix for Halogen Free Product ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V Drain to Current - Continuous - Pulsed ID IDM 115 800 mA Gate-to-Source Voltage - Continue - Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation Derate above 25℃ PD 225 1.8 mW mW/℃ Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃ (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω) EAS 9.6 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Resistance - Junction to Ambient θJA 417 ℃ /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ |
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