CMT2N7002

Champion Microelectronic Corporation

Page 1

GENERAL DESCRIPTION

FEATURES

This N-Channel enhancement mode field effect transistor is

produced using high cell density, DMOS technology. These

products have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching performance.

It can be used in most applications requiring up to 115mA DC

and can deliver pulsed currents up to 800mA. This product is

particularly suited for low voltage, low current applications such

as small servo motor control, power MOSFET gate drivers, and

other switching applications.

Voltage Controlled Small Signal Switch

Rugged and Reliable

High Saturation Current Capability

PIN CONFIGURATION

SYMBOL

SOT-23, SOT-323

SOT-363

Top View

Top View

D2

G1

S1

1

3

2

S2

G2

D1

D

S

G

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

CMT2N7002

SOT-23

CMT2N7002G*

SOT-23

CMT2N7002WG*

SOT-323

CMT2N7002DWG*

SOT-363

CMT2N7002X*

SOT-23

CMT2N7002WX*

SOT-323

CMT2N7002DWX*

SOT-363

W: Suffix for Package SOT-323

X : Suffix for Halogen Free Product

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

60

V

60

V

Drain to Current － Continuous

－

Pulsed

115

800

mA

Gate-to-Source Voltage － Continue

－

Non-repetitive

±20

±40

V

V

Total Power Dissipation

Derate above 25℃

225

1.8

mW

mW/℃

9.6

mJ

Operating and Storage Temperature Range

-55 to 150

℃

Thermal Resistance － Junction to Ambient

417

℃

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

300

℃