UT2305

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-133.F

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

- 20

V

Gate-Source Voltage

± 12

V

-4.2

A

Pulsed Drain Current (Note 1, 2)

-10

A

SOT-23-3

0.83

W

SOT-23

1.38

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient (Note 3)

SOT-23-3

150

°C/W

SOT-23

90

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-20

V

Drain-Source Leakage Current

-1

μA

Gate-Source Leakage Current

±100

nA

-0.1

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

-0.5

-1.2

V

Drain-Source On-State Resistance (Note 2)

53

mΩ

65

mΩ

100

mΩ

250

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

740

pF

Output Capacitance

167

pF

Reverse Transfer Capacitance

126

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 2)

5.9

ns

Turn-ON Rise Time

3.6

ns

Turn-OFF Delay Time

32.4

ns

Turn-OFF Fall Time

2.6

ns

Total Gate Charge (Note 2)

10.6

nC

Gate-Source Charge

2.32

nC

Gate-Drain Charge

3.68

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

-1.2

V

Reverse Recovery Time

dI/dt=100A/μs

27.7

ns

Reverse Recovery Charge

22

nC

2. Pulse width ≤300μs, duty cycle≤2%.

3. Surface mounted on 1 in