UT70P02

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-209.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-25

V

Gate-Source Voltage

±20

V

-75

A

Pulsed Drain Current (Note

1)

-350

A

107

W

Junction Temperature

+175

W/℃

Strong Temperature

-55 ~ +175

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

110

℃

/W

Junction-to-Case

1.4

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-25

V

Breakdown Voltage Temperature

Coefficient

Reference to 25 , I

-0.018

V/°С

Drain-Source Leakage Current

-1

µA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

7

Static Drain-Source On-Resistance

(Note 2)

10

mΩ

DYNAMIC PARAMETERS

Input Capacitance

2700

4200

pF

Output Capacitance

550

pF

Reverse Transfer Capacitance

380

pF

SWITCHING PARAMETERS

Total Gate Charge(Note 2)

33

52

nC

Gate Source Charge

7.5

nC

Gate Drain ("Miller") Charge

24

nC

Turn-ON Delay Time(Note 2)

11.2

ns

Turn-ON Rise Time

77

ns

Turn-OFF Delay Time

35

ns

Turn-OFF Fall-Time

67

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage(Note 2)

-1.3

V

Reverse Recovery Time

28

ns

Reverse Recovery Charge

dI/dt=100 A/μs

10

nC

Notes: 1.Pulse width limited by safe operating area.

2.Pulse width ≤ 300us , duty cycle ≤ 2%.