UT60T03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-183.B

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

45

A

Pulsed Drain Current (Note 2)

120

A

TO-220F

56

TO-252

44

W

Junction Temperature

+150

℃

Strong Temperature

-55 ~ +175

℃

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2 .Pulse width limited by safe operating area.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F

62.5

Junction to Ambient

TO-252

110

℃

/W

TO-220F

2.66

Junction to Case

TO-252

3.4

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Gate-Body Leakage Current

±100

nA

0.026

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

12

Static Drain-Source On-Resistance(Note 1)

25

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1135

Output Capacitance

200

Reverse Transfer Capacitance

f = 1.0MHz

135

pF

SWITCHING PARAMETERS

Total Gate Charge

11.6

Gate Source Charge

3.9

Gate Drain Charge

7

nC

Turn-ON Delay Time

8.8

Turn-ON Rise Time

57.5

Turn-OFF Delay Time

18.5

Turn-OFF Fall-Time

6.4

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage (Note 1)

1.3

V

Reverse Recovery Time

23.3

ns

Reverse Recovery Charge

A/μs

16

nC

Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%.

2. Essentially independent of operating temperature