USS4450G-TN3-R datasheet(2/4 Pages) UTC

Part #	USS4450G-TN3-R

Description	50V, 5A NPN LOW VCE(SAT) TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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2 / 4 page

USS4450

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-026.A

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

DC

IC

3

A

Collector Current

Peak

ICM

5

A

Peak Base Current

IBM

1

A

Power Dissipation (TC=25°C) (Note 2)

PD

1.4

W

Junction Temperature

TJ

150

°C

Operating Temperature

TOPR

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm

2

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note)

θJA

62.5

°C/W

Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm

2.

For other mounting conditions see “Thermal considerations for TO-252 in the General Part of associated

Handbook”.

ELECTRICAL CHARACTERISTICS TA = 25 °C unless otherwise specified.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

VCB = 50 V, IE =0

100

nA

Collector-Base Cut-Off Current

ICBO

VCB = 50 V, IE = 0, TJ = 150 °C

50

μ

A

Emitter-Base Cut-Off Current

IEBO

VEB =5V, IC =0

100

nA

VCE =2V, IC = 500 mA

200

VCE =2V, IC = 1 A, (Note 1)

200

DC Current Gain

hFE

VCE =2V, IC = 2 A, (Note 1)

100

IC = 500 mA, IB =50mA

90

mV

IC = 1 A, IB =50mA

170

mV

Collector-Emitter Saturation voltage

VCEsat

IC = 2 A, IB = 200 mA, (Note 1)

290

mV

Equivalent On-Resistance

RCEsat

IC = 2 A, IB = 200 mA, (Note 1)

110 145

mΩ

Base-Emitter Saturation voltage

VBEsat

IC = 2 A, IB = 200 mA, (Note 1)

1.2

V

Base-Emitter Turn-On Voltage

VBEon

VCE =2V, IC = 1 A, (Note 1)

1.1

V

Transition Frequency

fT

IC = 100 mA, VCE = 5 V, f = 100 MHz

100

MHz

Collector Capacitance

Cc

VCB = 10 V, IE =Ie = 0, f = 1 MHz

30

pF

Note 1. Pulse test: tp≤300 μs, δ≤0.02.

TYPICAL CHARACTERISTICS

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