UN1066

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-023,C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-to-Base Voltage

20

V

Collector-to-Emitter Voltage

15

V

Emitter-to-Base Voltage

5

V

Collector Current

6

A

Collector Current (Pulse)

9

A

Base Current

600

mA

℃

3.5

W

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-to-Base Breakdown Voltage

20

V

Collector-to-Emitter Breakdown Voltage

15

V

Emitter-to-Base Breakdown Voltage

6

V

180

mV

Collector-to-Emitter Saturation Voltage

300

mV

Base-to-Emitter Saturation Voltage

1.2

V

Collector Cutoff Current

0.1

µA

Emitter Cutoff Current

0.1

µA

DC Current Gain

250

Gain-Bandwidth Product

100

MHz

Output Capacitance

50

pF

Turn-on Time

Refer to Test Circuit

50

ns

Storage Time

Refer to Test Circuit

250

ns

Fall Time

Refer to Test Circuit

25

ns