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UK3919L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UK3919L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UK3919 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-200.A ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS ±20 V Continuous Drain Current ID ±64 A Pulsed Drain Current (Note1) IDM ±256 A Single Avalanche Current (Note2) IAS 27 A Single Avalanche Energy (Note2) EAS 73 mJ Total Power Dissipation PD 36 W Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VDS =25 V, VGS =0 V 10 µA Gate-Body Leakage Current IGSS VDS =0 V, VGS =±20V ±100 nA ON CHARACTERISTICS Gate-Threshold Voltage VGS(OFF) VDS =10V, ID =1mA 2.0 2.5 3.0 V VGS =10 V, ID =32 A 4.5 5.6 Drain-Source On-Resistance RDS(ON) VGS =5.0 V, ID =16 A 6.8 13.7 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 2050 Output Capacitance COSS 460 Reverse Transfer Capacitance CRSS VDS =10V, VGS =0V, f=1MHz 330 pF SWITCHING PARAMETERS Gate to Source Charge QG 42 Gate Charge at Threshold QGS 8 Gate to Drain Charge QGD VDD =20V, VGS =10 V,ID =64 A 15 nC Turn-ON Delay Time tD(ON) 16 Turn-ON Rise Time tR 19 Turn-OFF Delay Time tD(OFF) 53 Turn-OFF Fall-Time tF VDD =12.5V, ID=32 A, VGS =10V, RG =10 Ω 22 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Body Diode Forward Voltage VSD IF=64 A, VGS=0 V 0.97 V Reverse Recovery Time tRR 23 ns Reverse Recovery Charge QRR IF= 64 A,VGS=0 V ,di/dt = 100 A/μs 11 nC Notes: 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting TCH= 25℃, VDD = 12.5 V, RG = 25Ω, VGS = 20 → 0 V |
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