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UK2996G-TF2-T Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UK2996G-TF2-T
Description  600V SILICON N-CHANNEL POWER MOSFET
Download  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UK2996G-TF2-T Datasheet(HTML) 3 Page - Unisonic Technologies

  UK2996G-TF2-T Datasheet HTML 1Page - Unisonic Technologies UK2996G-TF2-T Datasheet HTML 2Page - Unisonic Technologies UK2996G-TF2-T Datasheet HTML 3Page - Unisonic Technologies UK2996G-TF2-T Datasheet HTML 4Page - Unisonic Technologies UK2996G-TF2-T Datasheet HTML 5Page - Unisonic Technologies UK2996G-TF2-T Datasheet HTML 6Page - Unisonic Technologies  
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UK2996
MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-063.C
SOURCE−DRAIN DIODE CHARACTERISTICS (TA = 25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Diode Forward Voltage
VSD
VGS = 0V, IS = 10A
-1.7
V
Continuous Source Current (body diode)
IS
Integral Reverse p-n Junction
Diode in the MOSFET
Gate
Source
Drain
10
A
Pulse Source Current (body diode)
ISM
30
A
Reverse Recovery Time
tRR
VGS = 0V, IS = 10A,
dIF/dt = 100 A/µs
1600
ns
Reverse Recovery Charge
QRR
17
µC


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