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UF830L-TF3-T Datasheet(PDF) 7 Page - Unisonic Technologies

Part # UF830L-TF3-T
Description  4.5A, 500V, 1.5廓, N-CHANNEL POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF830L-TF3-T Datasheet(HTML) 7 Page - Unisonic Technologies

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UF830
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
7 of 8
www.unisonic.com.tw
QW-R502-046,G
TYPICAL CHARACTERISTICS (Cont.)
Gate to Source Voltage, VGS (V)
2
5
7
Transfer Characteristics
0
6
1
0
1
2
3
4
5
4
3
TJ = 25°C
TJ = -40°C
TJ = 125°C
Case Temperature, TC (°C)
4
16
20
Drain to Source on Resistance vs.
Gate Voltage and Drain Current
0
0
2
12
VGS=10V
VGS=20V
8
4
6
8
10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VDS>ID(ON)×rDS(ON)MAX
Junction Temperature, TJ (°C)
0
80
Normalized Drain to Source on Resistance vs.
Junction Temperature
0.2
120
-40
0.6
1.0
1.4
1.8
2.2
40
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VGS =10V, ID=2.5A
140
100
60
20
-20
-60
Junction Temperature, TJ (°C)
0
80
Normalized Drain to Source Breakdown Voltage vs.
Junction Temperature
0.75
160
-40
1.25
40
120
0.85
0.95
1.05
1.15
140
100
60
20
-20
ID=250μA
Capacitance vs. Drain to Source Voltage
Drain to Source Voltage, VDS (V)
0
1
400
800
2000
20
CISS
50
1600
1200
10
30
30
VGS=0V, f=1MHz
CISS=CGS+CGD
CRSS=CGD
COSS=CDS+CGS
CRSS
COSS
Drain Current, ID (A)
2
35
Transconductance vs. Drain Current
0
4
1
0
1
2
3
4
5
TJ= -40°C
TJ= 25°C
TJ= 125°C
Pulse Duration=80μs
Duty Cycle = 0.5% Max


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