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UF740G-TQ2-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UF740G-TQ2-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF740 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-078,E ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C~125°C) VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C) VDGR 400 V Gate to Source Voltage VGS ±20 V Drain Current Continuous ID 10 A TC = 100°C ID 6.3 A Pulsed IDM 40 A Power Dissipation TO-220/TO-263 PD 125 W TO-220F 44 TO-220F2 46 Derating above 25°C TO-220/TO-263 1.0 W/°C TO-220F 0.35 TO-220F2 0.37 Single Pulse Avalanche Energy Rating(Note3) EAS 520 mJ Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/TO-263 θJc 1.0 °C/W TO-220F 2.86 TO-220F2 2.72 ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 400 V Gate to Threshold Voltage VGS(THR) VGS = VDS, ID = 250μA 2.0 4.0 V On-State Drain Current (Note 1) ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V 10 A Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V 25 μA VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C 250 μA Gate to Source Leakage Current IGSS VGS = ±20V ±500 nA Drain to Source On Resistance RDS(ON) VGS = 10V, ID = 5.2A (Note 1) 0.47 0.55 Ω Forward Transconductance gFS VDS ≥ 50V, ID = 5.2A (Note 1) 5.8 8.9 S Turn-On Delay Time tDLY(ON) VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature 15 21 ns Rise Time tR 25 41 ns Turn-Off Delay Time tDLY(OFF) 52 75 ns Fall Time tF 25 36 ns Total Gate Charge (Gate to Source + Gate to Drain) QG(TOT) VGS = 10V, ID = 10A, IG(REF) = 1.5mA, VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature 41 63 nC Gate to Source Charge QGS 6.5 nC Gate to Drain “Miller” Charge QGD 23 nC Input Capacitance CISS VGS = 0V, VDS =25V, f = 1.0MHz 1250 pF Output Capacitance COSS 300 pF Reverse - Transfer Capacitance CRSS 80 pF |
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