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UF830ZL-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UF830ZL-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page UF830Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-612.A INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL MIN TYP MAX UNIT Internal Drain Inductance Measured from the contact screw on tab to center of die 3.5 nH Measured from the drain lead(6mm from package) to center of die LD 4.5 nH Internal Source Inductance Measured from the source lead(6mm from header) to source bond pad LS 7.5 nH Remark: Modified MOSFET symbol showing the internal devices inductances as below. SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage (Note 1) VSD TJ=25°C, ISD=4.5A, VGS=0V 1.6 V Continuous Source to Drain Current ISD 5.5 A Pulse Source to Drain Current ISDM Note 2 18 A Reverse Recovery Time tRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180 350 760 ns Reverse Recovery Charge QRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 0.96 2.2 4.3 μC NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. G S D |
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