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8050S Datasheet(PDF) 2 Page - Unisonic Technologies |
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8050S Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 8050S NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R206-001,F ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Collector Dissipation(TA=25°C) SOT-23 PC 350 mW TO-92 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC = 100μA, IE = 0 30 V Collector-Emitter Breakdown Voltage BVCEO IC = 1mA, IB = 0 20 V Emitter-Base Breakdown Voltage BVEBO IE = 100μA, IC =0 5 V Collector Cut-Off Current ICBO VCB = 30V,IE = 0 1 uA Emitter Cut-Off Current IEBO VEB = 5V, IC = 0 100 nA DC Current Gain(note) hFE1 VCE = 1V, IC = 1mA 100 400 hFE2 VCE = 1V, IC = 150 mA 120 hFE3 VCE = 1V, IC = 500mA 40 Collector-Emitter Saturation Voltage VCE(SAT) IC = 500mA, IB = 50mA 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC = 500mA, IB = 50mA 1.2 V Base-Emitter Saturation Voltage VBE(SAT) VCE = 1V, IC = 10mA 1.0 V Current Gain Bandwidth Product fT VCE = 10V, IC = 50mA 100 MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz 9.0 pF CLASSIFICATION OF hFE2 RANK C D E RANGE 120-200 160-300 280-400 |
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