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25N06G-TN3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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25N06G-TN3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  25N06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-450.b ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 60 V Drain-Source Leakage Current (VGS=0) IDSS VDS=Max Rating 1 µA VDS= Max Rating×0.8, TC=125°C 10 Gate- Source Leakage Current (VDS=0) IGSS VGS=±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2 2.9 4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=12.5A 0.048 0.065 Ω On State Drain Current ID(on) VDS>ID(on) ×RDS(ON)MAX, VGS=10V 25 A Forward Transconductance (Note 1) gFS VDS>ID(on) ×RDS(ON)MAX, ID=12.5A 7 11 S DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz 700 900 pF Output Capacitance COSS 320 450 pF Reverse Transfer Capacitance CRSS 90 150 pF SWITCHING PARAMETERS Total Gate Charge QG VDD=40V, VGS=10V, ID=25A 26 40 nC Gate to Source Charge QGS 8 nC Gate to Drain Charge QGD 9 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=3A, RG=50Ω, VGS=10V 30 45 ns Rise Time tR 90 130 ns Turn-OFF Delay Time tD(OFF) VDD=40V, ID=25A, RG=50Ω, VGS=10V 80 120 ns Fall-Time tF 80 120 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=25A, VGS=0V (Note 1) 1.5 V Source-Drain Current ISD 25 A Source-Drain Current (Pulsed) (Note 2) ISDM 100 A Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area |
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