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24N50 Datasheet(PDF) 3 Page - Unisonic Technologies |
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24N50 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 24N50 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-533.D ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, ID=24A (Note 1, 2) 90 120 nC Gate to Source Charge QGS 23 nC Gate to Drain Charge QGD 52 nC Turn-ON Delay Time tD(ON) VDD=250V, ID=24A, RG=25Ω (Note 1, 2) 80 170 ns Rise Time tR 250 500 ns Turn-OFF Delay Time tD(OFF) 200 400 ns Fall-Time tF 155 320 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 24 A Maximum Body-Diode Pulsed Current ISM 96 A Drain-Source Diode Forward Voltage VSD IS=24A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr IS=24A, VGS=0V, dIF/dt=100A/µs (Note 1) 250 ns Body Diode Reverse Recovery Charge QRR 1.1 µC Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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