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15N60L-TF1-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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15N60L-TF1-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  15N60 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-485.e ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA, TJ=25°C 600 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C 0.65 V/°C Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 1 µA VDS=520V, TC=125°C 10 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A 0.5 0.65 Ω DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 2380 3095 pF Output Capacitance COSS 295 385 pF Reverse Transfer Capacitance CRSS 23.6 35.5 pF SWITCHING PARAMETERS Total Gate Charge QG VDS=520V, VGS=10V, ID=15A (Note 1, 2) 48.5 63.0 nC Gate-Source Charge QGS 14.0 nC Gate-Drain Charge QGD 21.2 nC Turn-ON Delay Time tD(ON) VDD=325V, ID=15A, RG=21.7Ω (Note 1, 2) 65 140 ns Turn-ON Rise Time tR 125 260 ns Turn-OFF Delay Time tD(OFF) 105 220 ns Turn-OFF Fall Time tF 65 140 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 15 A Maximum Body-Diode Pulsed Current ISM 60 A Drain-Source Diode Forward Voltage VSD IS =15A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr VGS=0V, IS=15A, dIF/dt=100A/μs (Note 1) 496 ns Body Diode Reverse Recovery Charge QRR 5.69 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 3. Drain current limited by maximum junction temperature |
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