MPSA06_11 datasheet(2/4 Pages) UTC

Part #	MPSA06

Description	NPN TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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MPSA06

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-035.C

ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

4

V

Collector Current - Continuous

IC

500

mA

Total device Dissipation, @TA=25°С

Derate above 25°С

PD

625

5

mW

mW/°С

Total device Dissipation, @TC=25°С

Derate above 25°С

PD

1500

12

mW

mW/°С

Junction Temperature

TJ

+125

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

θJA

200

Junction-to-Case

θJC

83.3

°С/W

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note 1)

BVCEO

IC=1.0mA, IB=0

80

V

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, Ic=0

4

V

Collector Cutoff Current

ICEO

VCE=60V, IB=0

0.1

μA

Collector Cutoff Current

ICBO

VCB=80V, IE=0

0.1

μA

ON CHARACTERISTICS

IC=10mA, VCE=1V

100

Dc Current Gain

hFE

IC=100mA, VCE=1V

100

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=100mA, IB=10mA

0.25

V

Base-Emitter On Voltage

VBE(ON)

IC=100mA, VCE=1V

1.2

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

(Note 2)

fT

IC=10mA, VCE=2V, f=100MHz

100

MHz

Note 1. Pulse test: PW<=300

μs, Duty Cycle<=2%

2. fT is defined as the frequency at which IhfeI extrapolates to unity.

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