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12N60G-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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12N60G-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 7 page 12N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw QW-R502-170.I ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A Drain Current Continuous ID 12 A Pulsed (Note 2) IDM 48 A Avalanche Energy Single Pulsed (Note 3) EAS 790 mJ Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220 / TO-262 PD 225 W TO-220F / TO-220F1 51 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220 / TO-262 θJC 0.56 °C/W TO-220F/TO-220F1 2.43 °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 V Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 1 µA Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID=250µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A 0.6 0.8 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz 1480 1900 pF Output Capacitance COSS 200 270 pF Reverse Transfer Capacitance CRSS 25 35 pF Gate Resistance RG VDS =0V, VGS =0V, f =1MHz 0.2 1.2 Ω |
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