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BS616LV2019 Datasheet(PDF) 6 Page - Brilliance Semiconductor |
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BS616LV2019 Datasheet(HTML) 6 Page - Brilliance Semiconductor |
6 / 11 page BS616LV2019 R0201-BS616LV2019 Revision 1.4 Oct. 2008 6 READ CYCLE 2 (1,3,4) READ CYCLE 3 (1, 4) NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE = VIL and CE2= VIH. 3. Address valid prior to or coincident with CE transition low and/or CE2 transition high. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. 6. 48B BGA ignore this parameters related to CE2. tCLZ (5,6) DOUT CE2 CE tACS2 (6) tACS1 tCHZ (5, 6) tOH tRC tOE tBE tBDO DOUT CE OE ADDRESS tCLZ (5,6) tACS1 tCHZ (1,5,6) tOHZ (5) tOLZ tAA LB, UB tBA CE2 tACS2(6) |
Similar Part No. - BS616LV2019_08 |
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Similar Description - BS616LV2019_08 |
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