BS616LV2019_08 datasheet(6/11 Pages) BSI

Part #	BS616LV2019

Description	Very Low Power CMOS SRAM 128K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BS616LV2019

R0201-BS616LV2019

Revision

1.4

Oct.

2008

6

READ CYCLE 2

(1,3,4)

READ CYCLE 3

(1, 4)

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = VIL and CE2= VIH.

3. Address valid prior to or coincident with CE transition low and/or CE2 transition high.

4. OE = VIL.

5. Transition is measured ± 500mV from steady state with CL = 5pF.

The parameter is guaranteed but not 100% tested.

6. 48B BGA ignore this parameters related to CE2.

tCLZ

(5,6)

DOUT

CE2

CE

tACS2

(6)

tACS1

tCHZ

(5, 6)

tOH

tRC

tOE

tBE

tBDO

DOUT

CE

OE

ADDRESS

tCLZ

(5,6)

tACS1

tCHZ

(1,5,6)

tOHZ

(5)

tOLZ

tAA

LB, UB

tBA

CE2

tACS2(6)

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BS616LV2019 Datasheet(PDF) 6 Page - Brilliance Semiconductor

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