BS616LV1611_08 datasheet(3/11 Pages) BSI

Part #	BS616LV1611

Description	Very Low Power CMOS SRAM 1M X 16 bit

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	BSI [Brilliance Semiconductor]

Direct Link

Logo

3 / 11 page

BS616LV1611

R0201-BS616LV1611

Revision

2.4

Oct.

2008

3

ABSOLUTE MAXIMUM RATINGS

(1)

SYMBOL

PARAMETER

RATING

UNITS

VTERM

Terminal Voltage with

Respect to GND

-0.5

(2) to 7.0

V

TBIAS

Temperature Under

Bias

-40 to +125

OC

TSTG

Storage Temperature

-60 to +150

OC

PT

Power Dissipation

1.0

W

IOUT

DC Output Current

20

mA

1. Stresses greater than those listed under ABSOLUTE

MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of

the device at these or any other conditions above those

indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

2. –2.0V in case of AC pulse width less than 30 ns.

OPERATING RANGE

RANG

AMBIENT

TEMPERATURE

VCC

Commercial

0

OC to + 70OC

2.4V ~ 5.5V

Industrial

-40

OC to + 85OC

2.4V ~ 5.5V

CAPACITANCE

(1) (T

A = 25

OC, f = 1.0MHz)

SYMBOL PAMAMETER CONDITIONS MAX. UNITS

CIN

Input

Capacitance

VIN = 0V

6

pF

CIO

Input/Output

Capacitance

VI/O = 0V

8

pF

1. This parameter is guaranteed and not 100% tested.

DC ELECTRICAL CHARACTERISTICS (TA = -40

OC to +85OC)

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN.

TYP.(1)

MAX.

UNITS

VCC

Power Supply

2.4

--

5.5

V

VIL

Input Low Voltage

-0.5

(2)

--

0.8

V

VIH

Input High Voltage

2.2

--

VCC+0.3

(3)

V

IIL

Input Leakage Current

VIN = 0V to VCC,

CE1 = VIH or CE2 = VIL

--

1

uA

ILO

Output Leakage Current

VI/O = 0V to VCC

,

CE1 = VIH or CE2 = VIL or OE = VIH

--

1

uA

VOL

Output Low Voltage

VCC = Max, IOL = 2.0mA

--

0.4

V

VOH

Output High Voltage

VCC = Min, IOH = -1.0mA

2.4

--

V

VCC=3.0V

46

ICC

(5)

Operating Power Supply

Current

CE1 = VIL and CE2 = VIH,

IDQ = 0mA, f = FMAX

(4)

VCC=5.0V

--

115

mA

VCC=3.0V

2

ICC1

Operating Power Supply

Current

CE1 = VIL and CE2 = VIH,

IDQ = 0mA, f = 1MHz

VCC=5.0V

--

10

mA

VCC=3.0V

1.0

ICCSB

Standby Current – TTL

CE1 = VIH, or CE2 = VIL,

IDQ = 0mA

VCC=5.0V

--

2.0

mA

VCC=3.0V

1.5

16

ICCSB1

(6)

Standby Current – CMOS

CE1≧VCC-0.2V or CE2≦0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

VCC=5.0V

--

6.0

100

uA

1. Typical characteristics are at TA=25

OC and not 100% tested.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC.

5. ICC (MAX.) is 45mA/113mA at VCC=3.0V/5.0V and TA=70

OC.

6. ICCSB1(MAX.) is 8.0uA/50uA at VCC=3.0V/5.0V and TA=70

OC.

Similar Part No. - BS616LV1611_08

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BS616LV1611	164Kb / 11P	Very Low Power CMOS SRAM 1M X 16 bit

More results

Similar Description - BS616LV1611_08

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BS616LV1611	164Kb / 11P	Very Low Power CMOS SRAM 1M X 16 bit
	BS616LV161	254Kb / 8P	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
	BS616LV1611	255Kb / 8P	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
	BS616LV1615	253Kb / 8P	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
	BS62LV8001	243Kb / 10P	Very Low Power CMOS SRAM 1M X 8 bit
	BS62LV8001	204Kb / 10P	Very Low Power CMOS SRAM 1M X 8 bit
	BS62LV8005	218Kb / 10P	Very Low Power/Voltage CMOS SRAM 1M X 8 bit
	BS62LV8001	265Kb / 9P	Very Low Power/Voltage CMOS SRAM 1M X 8 bit
List of Unclassifed Man...	STC62WV1M8	254Kb / 9P	Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Brilliance Semiconducto...	BS62LV8000	220Kb / 10P	Very Low Power/Voltage CMOS SRAM 1M X 8 bit

More results

BS616LV1611 Datasheet(PDF) 3 Page - Brilliance Semiconductor

BS616LV1611 Datasheet(HTML) 3 Page - Brilliance Semiconductor

Similar Part No. - BS616LV1611_08

Similar Description - BS616LV1611_08

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL