11N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-462.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

500

V

Gate to Source Voltage

±30

V

Continuous Drain Current

11 (Note 2)

A

7 (Note 2)

A

Pulsed Drain Current (Note 3)

44 (Note 2)

A

Single Pulsed Avalanche Energy(Note 4)

670

mJ

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

195

W

TO-220F1

48

TO-220F

147

Derate above

25°C

TO-220

1.56

W/°C

TO-220F1

0.39

TO-220F

1.18

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220

0.64

°C/W

TO-220F1

2.58

TO-220F

0.85