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10N65G-TQ2-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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10N65G-TQ2-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page  10N65 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-588.C ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 1 µA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4.75A 0.72 0.86 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 1570 2040 pF Output Capacitance COSS 166 215 pF Reverse Transfer Capacitance CRSS 18 24 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=325V, ID =10A, RG =25Ω (Note 1, 2) 23 55 ns Turn-On Rise Time tR 69 150 ns Turn-Off Delay Time tD(OFF) 144 300 ns Turn-Off Fall Time tF 77 165 ns Total Gate Charge QG VDS=520V, ID=10A, VGS=10 V (Note 1, 2) 44 57 nC Gate-Source Charge QGS 6.7 nC Gate-Drain Charge QGD 18.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Reverse Recovery Time trr VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) 420 ns Reverse Recovery Charge QRR 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature |
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