10N75

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-501.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

750

V

Gate-Source Voltage

±30

V

Drain Current

Continuous

10

A

Pulsed (Note 2)

40

A

Avalanche Current (Note 2)

10

A

Avalanche Energy

Single Pulsed (Note 3)

920

mJ

Repetitive (Note 2)

24

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-220

156

W

TO-220F/TO-220F1

50

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-220F/TO-220F1

62.5

°C/W

Junction to Case

TO-220

0.8

°C/W

TO-220F/TO-220F1

2.5

°C/W