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MJE13007L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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MJE13007L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page MJE13007 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R203-019.F ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Sustaining Voltage VCEO 400 V Collector-Emitter Breakdown Voltage VCBO 700 V Emitter-Base Voltage VEBO 9.0 V Continuous IC 8.0 A Collector Current Peak (1) ICM 16 A Continuous IB 4.0 A Base Current Peak (1) IBM 8.0 A Continuous IE 12 A Emitter Current Peak (1) IEM 24 A Total Device Dissipation TC = 25°C PD 80 W Operating and Storage Junction Temperature TJ, TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 1.56 °C/W Junction to Ambient θJA 62.5 °C/W Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%. Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8•lbs. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage VCEO(SUS) IC=10mA, IB=0 400 V VCES=700V 0.1 mA Collector Cutoff Current ICBO VCES=700V, TC=125°C 1.0 mA Emitter Cutoff Current IEBO VEB=9.0V, IC=0 100 μA hFE1 IC=2.0A, VCE=5.0V 8.0 40 DC Current Gain hFE2 IC=5.0A, VCE=5.0V 5.0 30 IC=2.0A, IB=0.4A 1.0 V IC=5.0A, IB=1.0A 2.0 V IC=8.0A, IB=2.0A 3.0 V Collector-Emitter Saturation Voltage VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C 3.0 V IC=2.0A, IB=0.4A 1.2 V IC=5.0A, IB=1.0A 1.6 V Base-Emitter Saturation Voltage VBE(SAT) IC=5.0A, IB=1.0A, TC=100°C 1.5 V Current-Gain-Bandwidth Product fT IC=500mA, VCE=10V, f=1.0 MHz 4.0 14 MHz Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz 80 pF Resistive Load (Table 1) Delay Time tD 0.025 0.1 μs Rise Time tR 0.5 1.5 μs Storage Time tS 1.8 3.0 μs Fall Time tF VCC=125V, IC=5.0A, IB1=IB2=1.0A, tp=25μs, Duty Cycle≤1.0% 0.23 0.7 μs * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% |
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