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8N90G-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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8N90G-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page  8N90 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-470.d ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 900 V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C 0.95 V/°C Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 10 µA VDS=720V, TC=125°C 100 µA Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A 1300 1550 mΩ Forward Transconductance (Note 1) gFS VDS=50V, ID=4A 4 5.5 S DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 1600 2080 pF Output Capacitance COSS 130 170 pF Reverse Transfer Capacitance CRSS 12 15 pF SWITCHING PARAMETERS (Note 1, Note 2) Total Gate Charge QG VDS=720V, VGS=10V, ID=8A 35 45 nC Gate-Source Charge QGS 10 nC Gate-Drain Charge QGD 14 nC Turn-ON Delay Time tD(ON) VDD=450V, ID=8A, RG=25Ω 40 90 ns Turn-ON Rise Time tR 110 230 ns Turn-OFF Delay Time tD(OFF) 70 150 ns Turn-OFF Fall Time tF 70 150 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 8 A Maximum Body-Diode Pulsed Current ISM 25 A Drain-Source Diode Forward Voltage VSD IS =8A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr VGS=0V, IS=8A, dIF/dt=100A/μs (Note 1) 530 ns Body Diode Reverse Recovery Charge QRR 5.8 μC Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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