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8N60G-T2Q-T Datasheet(PDF) 6 Page - Unisonic Technologies |
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8N60G-T2Q-T Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 8N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-115,F TYPICAL CHARACTERISTICS 10 1 10 0.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 10 10 1 0.1 5.0V Notes: 1. 250µs Pulse Test 2. TC=25°C VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 100 Notes: 1. VDS=40V 2. 250µs Pulse Test 25°C 150°C 0 0 Drain Current, ID (A) 5 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 10 15 20 1 0.1 0.2 Source-Drain Voltage, VSD (V) Body Diode Forward Voltage vs. Source Current 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150°C 25°C Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V TJ=25°C 1900 0 0.1 Drain-SourceVoltage, VDS (V) 1700 500 110 1500 1300 Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 5 15 25 8 10 12 10 6 4 2 0 VDS=120V VDS=300V VDS=480V 20 Gate Charge Characteristics 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. VGS=0V 2. f = 1MHz 1100 900 300 100 30 ID=8A |
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