8N50H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-745.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Drain Current

7 (Note 2)

A

Avalanche Current (Note 3)

7

A

Single Pulsed Avalanche Energy (Note 4)

270

mJ

Power Dissipation

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

°C/W

Junction to Case

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

500

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.8

1

Ω

DYNAMIC PARAMETERS

Input Capacitance

pF

Output Capacitance

pF

Reverse Transfer Capacitance

pF

SWITCHING PARAMETERS

Total Gate Charge

12.8 16.6 nC

Gate to Source Charge

3.7

nC

Gate to Drain Charge

5.8

nC

Turn-ON Delay Time

6

20

ns

Rise Time

55

120

ns

Turn-OFF Delay Time

25

60

ns

Fall-Time

35

80

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

7

A

Drain-Source Diode Forward Voltage

1.4

V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature