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8N50H Datasheet(PDF) 2 Page - Unisonic Technologies |
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8N50H Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 8N50H Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-745.A ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 7 (Note 2) A Avalanche Current (Note 3) IAR 7 A Single Pulsed Avalanche Energy (Note 4) EAS 270 mJ Power Dissipation PD W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 10mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA °C/W Junction to Case θJC °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A 0.8 1 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz pF Output Capacitance COSS pF Reverse Transfer Capacitance CRSS pF SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=1.3A, IG=100uA, VGS=10V (Note 1, 2) 12.8 16.6 nC Gate to Source Charge QGS 3.7 nC Gate to Drain Charge QGD 5.8 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG =25Ω, VGS=0~10V (Note 1, 2) 6 20 ns Rise Time tR 55 120 ns Turn-OFF Delay Time tD(OFF) 25 60 ns Fall-Time tF 35 80 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 7 A Drain-Source Diode Forward Voltage VSD IS=7A, VGS=0V 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
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