7N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-475.b

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

900

V

0.96

V/°C

Drain-Source Leakage Current

10

µA

100

µA

Gate-Source Leakage Current

Forward

100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

5.0

V

Drain-Source On-State Resistance

1.5

1.8

Ω

Forward Transconductance

5.7

S

DYNAMIC PARAMETERS

Input Capacitance

1440 1880

pF

Output Capacitance

140

185

pF

Reverse Transfer Capacitance

17

23

pF

SWITCHING PARAMETERS

Total Gate Charge

40

52

nC

Gate-Source Charge

8.5

nC

Gate-Drain Charge

20

nC

Turn-ON Delay Time

35

80

ns

Turn-ON Rise Time

80

170

ns

Turn-OFF Delay Time

95

200

ns

Turn-OFF Fall Time

55

120

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

6.4

A

Maximum Body-Diode Pulsed Current

25.6

A

Drain-Source Diode Forward Voltage

1.4

V

Body Diode Reverse Recovery Time

400

ns

Body Diode Reverse Recovery Charge

4.3

μC

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature