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7N65AL-TF3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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7N65AL-TF3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page  7N65A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R502-585.B ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 µA Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA Reverse VGS = -30 V, VDS = 0 V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =3.5A (Note 4) 1.05 1.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz 950 1430 pF Output Capacitance COSS 85 130 pF Reverse Transfer Capacitance CRSS 12 18 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=325V, ID =7A, RG =25Ω (Note 1, 2) 16 ns Turn-On Rise Time tR 60 ns Turn-Off Delay Time tD(OFF) 80 ns Turn-Off Fall Time tF 65 ns Total Gate Charge QG VDS=520V, ID=7A, VGS=10 V (Note 1, 2) 28 42 nC Gate-Source Charge QGS 5.5 8.3 nC Gate-Drain Charge QGD 11 17 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A Reverse Recovery Time trr VGS = 0V, IS =7A, dIF / dt = 100A/μs (Note 1) 365 ns Reverse Recovery Charge QRR 4.23 µC Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2% 2. Essentially independent of operating temperature |
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