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7N60AL-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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7N60AL-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 7 page 7N60A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 7 www.unisonic.com.tw VQW-R502-111,F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 28 A Avalanche Energy Single Pulsed (Note 3) EAS 330 mJ Repetitive (Note 2) EAR 7.5 mJ Power Dissipation TO-220 PD 65 W TO-220F/TO-220F1 30 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ(MAX) 3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220 θJA 83.3 °C/W TO-220F/TO-220F1 62.5 Junction to Case TO-220 θJC 1.92 °C/W TO-220F/TO-220F1 4.16 |
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